onsemi HUF75639S3ST overview
HUF75639S3ST is a transistor made by onsemi. ON Semiconductor HUF75639S3ST Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):56 A, Drain…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor HUF75639S3ST Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):56 A, Drain Current-Max (ID):56 A, Drain-source On Resistance-Max:25 mΩ
DescriptionON Semiconductor HUF75639S3ST Discrete Semiconductor, MOSFET N-CH 100V 56A D2PAK
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Product type
Transistor
Explore Transistor Explore Semiconductors, Discretes Explore Power Field-effect Transistors
Available from
Sourcing support available
Start a sourcing request