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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQB19N20CTM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):19 A, Drain Current-Max (ID):19 A, Drain-source On Resistance-Max:170 mΩ
DescriptionON Semiconductor FQB19N20CTM Discrete Semiconductor, MOSFET N-CH 200V 19A D2PAK
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