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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMS3016DC Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):49 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:6 mΩ
DescriptionON Semiconductor FDMS3016DC Discrete Semiconductor, MOSFET N-CH 30V 18A 8-PQFN
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onsemi
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