onsemi FDB8160-F085 overview
FDB8160-F085 by onsemi is listed under Discrete Semiconductor Products. ON Semiconductor FDB8160-F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain…
Product details
Manufactured byonsemi
Product typeDiscrete Semiconductor Product
DescriptionON Semiconductor FDB8160-F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):80 A, Drain-source On Resistance-Max:1.8 mΩ
DescriptionON Semiconductor FDB8160-F085 Discrete Semiconductor, MOSFET N-CH 30V 80A D2PAK
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onsemi
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Discrete Semiconductor Product
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