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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor EGP30C Rectifier Diode, Output Current-Max:3 A, Forward Voltage-Max (VF):950 mV, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:6.25 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:150 V, Number of Elements:1
DescriptionON Semiconductor EGP30C Discrete Semiconductor, DIODE GEN PURP 150V 3A DO201AD
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onsemi
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