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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor BUL642D2G Power Bipolar Transistor, Collector-Emitter Voltage-Max:440 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):18, Transition Frequency-Nom (fT):13 MHz
DescriptionON Semiconductor BUL642D2G Discrete Semiconductor, TRANS NPN 440V 3A TO-220AB
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