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Product groupModules
DescriptionON Semiconductor BUH51G Power Bipolar Transistor, Collector-Emitter Voltage-Max:500 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):5, Transition Frequency-Nom (fT):23 MHz
DescriptionON Semiconductor BUH51G Discrete Semiconductor, TRANS NPN 500V 3A TO-225
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onsemi
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