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DescriptionON Semiconductor BUD42DG Power Bipolar Transistor, Collector-Emitter Voltage-Max:350 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):10
DescriptionON Semiconductor BUD42DG Discrete Semiconductor, TRANS NPN 350V 4A DPAK
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