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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor BS170RLRMG Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):500 mA, Drain Current-Max (ID):500 mA, Drain-source On Resistance-Max:5 Ω
DescriptionON Semiconductor BS170RLRMG Discrete Semiconductor, MOSFET N-CH 60V 0.5A TO-92
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onsemi
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Modules
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