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DescriptionON Semiconductor BD682T Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):750, Transition Frequency-Nom (fT):10 MHz
DescriptionON Semiconductor BD682T Discrete Semiconductor, TRANS PNP DARL 100V 4A TO225
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