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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDG8842CZ Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):750 mA, Drain Current-Max (ID):750 mA, Drain-source On Resistance-Max:400 mΩ
DescriptionON SEMICONDUCTOR FDG8842CZ ON Semiconductor FDG8842CZ MOSFET 1 N-channel , P-channel 300 mW SC 70 6
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onsemi
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