Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor HGTD1N120BNS9A Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):5.3 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
DescriptionON SEMICONDUCTOR HGTD1N120BNS9A IGBT ON Semiconductor HGTD1N120BNS9A TO 252AA single Standard 1200 V
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Available from
Sourcing support available
Start a sourcing request