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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor SZESD8351MUT5G Transient Suppressor, Clamping Voltage-Max:11.2 V, Breakdown Voltage-Nom:7 V, Diode Element Material:SILICON, Breakdown Voltage-Min:5.5 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:3.3 V, Number of Elements:1, Technology:AVALANCHE
DescriptionOn-Semiconductor SZESD8351MUT5G Circuit Protection, ESD Suppressor TVS Uni-Dir 3.3V Automotive 2-Pin X3DFN T/R
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onsemi
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