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SZESD7451N2T5G

onsemi ยท Modules

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onsemi SZESD7451N2T5G

onsemi SZESD7451N2T5G overview

ON Semiconductor SZESD7451N2T5G Transient Suppressor, Clamping Voltage-Max:13 V, Power Dissipation-Max:250 mW, Breakdown Voltage-Nom:6 V, Diode Element Material...

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Part number or familySZESD7451N2T5G
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor SZESD7451N2T5G Transient Suppressor, Clamping Voltage-Max:13 V, Power Dissipation-Max:250 mW, Breakdown Voltage-Nom:6 V, Diode Element Material:SILICON, Breakdown Voltage-Min:5 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:BIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:3.3 V, Number of Elements:1, Technology:AVALANCHE
DescriptionOn-Semiconductor SZESD7451N2T5G Circuit Protection, ESD Suppressor TVS 3.3V Automotive 2-Pin XDFN T/R

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Product group Modules Explore Modules Explore Circuit Protection Explore Transient Suppressors
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