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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor ESD1014MUTAG Transient Suppressor, Clamping Voltage-Max:11 V, Reverse Current-Max:5 µA, Breakdown Voltage-Nom:5.3 V, Diode Element Material:SILICON, Breakdown Voltage-Min:5 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:3.3 V, Number of Elements:1, Technology:AVALANCHE
DescriptionOn-Semiconductor ESD1014MUTAG Circuit Protection, ESD Suppressor Diode Array Uni-Dir 3.3V 10-Pin UDFN EP T/R
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onsemi
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