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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor HGT1S10N120BNST Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):35 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
DescriptionON SEMICONDUCTOR HGT1S10N120BNST IGBT ON Semiconductor HGT1S10N120BNST TO 263AB single Standard 1200 V
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