NXP Semiconductor BGD702N,112 overview
NXP USA Inc. BGD702N,112 Integrated Circuit, IC AMPLIFIER POWER SOT-115J BGD702N, 112 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω,...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP USA Inc. BGD702N,112 Integrated Circuit, IC AMPLIFIER POWER SOT-115J
DescriptionNXP USA Inc. BGD702N,112 Integrated Circuit, IC AMPLIFIER POWER SOT-115J
DescriptionBGD702N, 112 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:18.5 dB, Operating Frequency-Max:750 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER
DescriptionRF Amplifier BULK CATV
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| # | Name |
|---|---|
| 1 | BGD702N, 112 |