NXP Semiconductor IP4281CZ10,115 overview
NXP Semiconductors IP4281CZ10, 115 Transient Suppressor, Clamping Voltage-Max:8 V, Breakdown Voltage-Nom:7.5 V, Diode Element Material:SILICON, Breakdown Voltag...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors IP4281CZ10, 115 Transient Suppressor, Clamping Voltage-Max:8 V, Breakdown Voltage-Nom:7.5 V, Diode Element Material:SILICON, Breakdown Voltage-Min:6 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1, Technology:ZENER
DescriptionTVS DIODE 8VC 10XSON
DescriptionNXP Semiconductors IP4281CZ10, 115 Transient Suppressor, Clamping Voltage-Max:8 V, Breakdown Voltage-Nom:7.5 V, Diode Element Material:SILICON, Breakdown Voltage-Min:6 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1, Technology:ZENER
DescriptionNXP IP4281CZ10,115 ESD protection for high-speed interfaces -0.5~3.63V XSON10
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| # | Name |
|---|---|
| 1 | IP4281CZ10, 115 |