NXP Semiconductor PH3330L,115 overview
NXP Semiconductors PH3330L, 115 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Num...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PH3330L, 115 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):100 A, Drain Current-Max (ID):100 A, Drain-source On Resistance-Max:3.3 mΩ
DescriptionNXP USA Inc. PH3330L,115 Discrete Semiconductor, MOSFET N-CH 30V 100A LFPAK
DescriptionMOSFET N-CH 30V 100A LFPAK
DescriptionNXP Semiconductors PH3330L, 115 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):100 A, Drain Current-Max (ID):100 A, Drain-source On Resistance-Max:3.3 mΩ
DescriptionNXP PH3330L@115 Specialized Hot IC, PH3330L@115 NXP
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| # | Name |
|---|---|
| 1 | PH3330L, 115 |