NXP Semiconductor BB809T/R overview
BB809T/R is made by NXP Semiconductor. NXP Semiconductors BB809T/R Varactor, Diode Capacitance-Nom:39 pF,Reverse Current-Max:10 nA,Diode Element Material:SILICON,Breakdown Voltage-Min:30 V,Diode Type:VARIABLE CAPACITANCE DIODE,Configuration:SINGLE,Surface Mount:NO,Number of Elements:1
Manufactured byNXP Semiconductor
Part number or familyBB809T/R
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Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors BB809T/R Varactor, Diode Capacitance-Nom:39 pF,Reverse Current-Max:10 nA,Diode Element Material:SILICON,Breakdown Voltage-Min:30 V,Diode Type:VARIABLE CAPACITANCE DIODE,Configuration:SINGLE,Surface Mount:NO,Number of Elements:1
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