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BB804W212

NXP Semiconductor ยท Modules

NXP Semiconductor BB804W212

NXP Semiconductor BB804W212 overview

NXP Semiconductors BB804W212 Varactor, Reverse Current-Max:20 nA,Power Dissipation-Max:250 mW,Diode Element Material:SILICON,Breakdown Voltage-Min:18 V,Diode Ty...

Manufactured byNXP Semiconductor
Part number or familyBB804W212
Product groupModules

Product details

Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BB804W212 Varactor, Reverse Current-Max:20 nA,Power Dissipation-Max:250 mW,Diode Element Material:SILICON,Breakdown Voltage-Min:18 V,Diode Type:VARIABLE CAPACITANCE DIODE,Configuration:COMMON CATHODE, 2 ELEMENTS,Surface Mount:YES,Number of Elements:2

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