NXP Semiconductor BB804R212 overview
BB804R212 is made by NXP Semiconductor. NXP Semiconductors BB804R212 Varactor, Reverse Current-Max:20 nA,Power Dissipation-Max:250 mW,Diode Element Material:SILICON,Breakdown Voltage-Min:18 V,Diode Type:VARIABLE CAPACITANCE DIODE,Configuration:COMMON CATHODE, 2 ELEMENTS,Surface Mount:YES,Number of Elements:2
Manufactured byNXP Semiconductor
Part number or familyBB804R212
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Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors BB804R212 Varactor, Reverse Current-Max:20 nA,Power Dissipation-Max:250 mW,Diode Element Material:SILICON,Breakdown Voltage-Min:18 V,Diode Type:VARIABLE CAPACITANCE DIODE,Configuration:COMMON CATHODE, 2 ELEMENTS,Surface Mount:YES,Number of Elements:2
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