NXP Semiconductor BB804G215 overview
NXP Semiconductors BB804G215 Varactor, Reverse Current-Max:20 nA,Power Dissipation-Max:250 mW,Diode Element Material:SILICON,Breakdown Voltage-Min:18 V,Diode Ty...
Manufactured byNXP Semiconductor
Part number or familyBB804G215
Product typeProduct type not listed yet
Product details
Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors BB804G215 Varactor, Reverse Current-Max:20 nA,Power Dissipation-Max:250 mW,Diode Element Material:SILICON,Breakdown Voltage-Min:18 V,Diode Type:VARIABLE CAPACITANCE DIODE,Configuration:COMMON CATHODE, 2 ELEMENTS,Surface Mount:YES,Number of Elements:2
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
NXP Semiconductor
View NXP Semiconductor profile
Product type
Product type not listed yet
Available from
Sourcing support available
Start a sourcing request