NXP Semiconductor BB133-T overview
NXP Semiconductors BB133-T Varactor, Diode Capacitance-Nom:42 pF,Reverse Current-Max:10 nA,Diode Element Material:SILICON,Breakdown Voltage-Min:30 V,Diode Type:...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BB133-T Varactor, Diode Capacitance-Nom:42 pF,Reverse Current-Max:10 nA,Diode Element Material:SILICON,Breakdown Voltage-Min:30 V,Diode Type:VARIABLE CAPACITANCE DIODE,Configuration:SINGLE,Surface Mount:YES,Number of Elements:1
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