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BTA216B-800E

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NXP Semiconductor BTA216B-800E

NXP Semiconductor BTA216B-800E overview

Philips Semiconductors BTA216B800E Triac, On-State Voltage-Max:1.5 V, Leakage Current-Max:500 µA, Holding Current-Max:25 mA, DC Gate Trigger Current-Max:10 mA,...

Manufactured byNXP Semiconductor
Part number or familyBTA216B-800E
Product groupModules

Product details

Manufactured byNXP Semiconductor
Product groupModules
DescriptionPhilips Semiconductors BTA216B800E Triac, On-State Voltage-Max:1.5 V, Leakage Current-Max:500 µA, Holding Current-Max:25 mA, DC Gate Trigger Current-Max:10 mA, Repetitive Peak Off-state Voltage:800 V, RMS On-state Current-Max:16 A
DescriptionNXP Semiconductors BTA216B-800E Triac, Leakage Current-Max:500 µA, Holding Current-Max:25 mA, DC Gate Trigger Current-Max:10 mA, Repetitive Peak Off-state Voltage:800 V, RMS On-state Current-Max:16 A

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1 BTA216B800E