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BT139X-800E

NXP Semiconductor · Modules

NXP Semiconductor BT139X-800E

NXP Semiconductor BT139X-800E overview

Philips Semiconductors BT139X800E Triac, On-State Voltage-Max:1.6 V, Leakage Current-Max:500 µA, Holding Current-Max:30 mA, DC Gate Trigger Current-Max:25 mA, ...

Manufactured byNXP Semiconductor
Part number or familyBT139X-800E
Product groupModules

Product details

Manufactured byNXP Semiconductor
Product groupModules
DescriptionPhilips Semiconductors BT139X800E Triac, On-State Voltage-Max:1.6 V, Leakage Current-Max:500 µA, Holding Current-Max:30 mA, DC Gate Trigger Current-Max:25 mA, Repetitive Peak Off-state Voltage:800 V, RMS On-state Current-Max:16 A
DescriptionNXP BT139X-800E Integrated Circuit, BT139X-800E NXP
DescriptionNXP Semiconductors BT139X-800E Triac, Holding Current-Max:30 mA, DC Gate Trigger Current-Max:10 mA, Repetitive Peak Off-state Voltage:800 V, RMS On-state Current-Max:16 A

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# Name
1 BT139X800E