NXP Semiconductor BAS17-T overview
NXP Semiconductors BAS17-T Stabistor Diode, Forward Voltage-Max (VF):960 mV, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:STABISTOR ...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BAS17-T Stabistor Diode, Forward Voltage-Max (VF):960 mV, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:STABISTOR DIODE, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1
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