NXP Semiconductor PMEG6030EVP overview
NXP PMEG6030EVP Specialized Hot IC, PMEG6030EVP NXP NXP Semiconductors PMEG6030EVP Rectifier Diode, Forward Voltage-Max (VF):475 mV, Reverse Recovery Time-Max:2...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP PMEG6030EVP Specialized Hot IC, PMEG6030EVP NXP
DescriptionNXP Semiconductors PMEG6030EVP Rectifier Diode, Forward Voltage-Max (VF):475 mV, Reverse Recovery Time-Max:20 ns, Reverse Current-Max:400 µA, Power Dissipation-Max:750 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:60 V, Number of Elements:1, Technology:SCHOTTKY
DescriptionNXP Semiconductors PMEG6030EVP Rectifier Diode, Forward Voltage-Max (VF):475 mV, Reverse Recovery Time-Max:20 ns, Reverse Current-Max:400 µA, Power Dissipation-Max:750 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:60 V, Number of Elements:1, Technology:SCHOTTKY
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