NXP Semiconductor PMEG040V030EPD overview
NXP Semiconductors PMEG040V030EPD Rectifier Diode, Forward Voltage-Max (VF):490 mV, Reverse Recovery Time-Max:11 ns, Reverse Current-Max:120 µA, Power Dissipat...
Product details
Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PMEG040V030EPD Rectifier Diode, Forward Voltage-Max (VF):490 mV, Reverse Recovery Time-Max:11 ns, Reverse Current-Max:120 µA, Power Dissipation-Max:1.66 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:40 V, Number of Elements:1, Technology:SCHOTTKY
DescriptionNXP Semiconductors PMEG040V030EPD Rectifier Diode, Forward Voltage-Max (VF):490 mV, Reverse Recovery Time-Max:11 ns, Reverse Current-Max:120 µA, Power Dissipation-Max:1.66 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:40 V, Number of Elements:1, Technology:SCHOTTKY
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
NXP Semiconductor
View NXP Semiconductor profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request