NXP Semiconductor PMEG030V050EPD overview
NXP Semiconductors PMEG030V050EPD Rectifier Diode, Forward Voltage-Max (VF):500 mV, Reverse Recovery Time-Max:12 ns, Reverse Current-Max:150 µA, Power Dissipat...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PMEG030V050EPD Rectifier Diode, Forward Voltage-Max (VF):500 mV, Reverse Recovery Time-Max:12 ns, Reverse Current-Max:150 µA, Power Dissipation-Max:1.66 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:30 V, Number of Elements:1, Technology:SCHOTTKY
DescriptionNXP Semiconductors PMEG030V050EPD Rectifier Diode, Forward Voltage-Max (VF):500 mV, Reverse Recovery Time-Max:12 ns, Reverse Current-Max:150 µA, Power Dissipation-Max:1.66 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:30 V, Number of Elements:1, Technology:SCHOTTKY
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