NXP Semiconductor BYV36ET/R overview
BYV36ET/R is made by NXP Semiconductor. NXP Semiconductors BYV36ET/R Rectifier Diode, Output Current-Max:810 mA,Reverse Recovery Time-Max:150 ns,Diode Element Material:SILICON,Diode Type:RECTIFIER DIODE,Configuration:SINGLE,Surface Mount:NO,Rep Pk Reverse Voltage-Max:1 kV,Number of Elements:1,Technology:AVALANCHE
Manufactured byNXP Semiconductor
Part number or familyBYV36ET/R
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Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors BYV36ET/R Rectifier Diode, Output Current-Max:810 mA,Reverse Recovery Time-Max:150 ns,Diode Element Material:SILICON,Diode Type:RECTIFIER DIODE,Configuration:SINGLE,Surface Mount:NO,Rep Pk Reverse Voltage-Max:1 kV,Number of Elements:1,Technology:AVALANCHE
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