NXP Semiconductor BYG80E-T overview
NXP Semiconductors BYG80E-T Rectifier Diode, Output Current-Max:1.5 A,Reverse Recovery Time-Max:50 ns,Diode Element Material:SILICON,Diode Type:RECTIFIER DIODE,...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BYG80E-T Rectifier Diode, Output Current-Max:1.5 A,Reverse Recovery Time-Max:50 ns,Diode Element Material:SILICON,Diode Type:RECTIFIER DIODE,Configuration:SINGLE,Surface Mount:YES,Rep Pk Reverse Voltage-Max:250 V,Number of Elements:1,Technology:AVALANCHE
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