NXP Semiconductor BYG50D/T3 overview
NXP Semiconductors BYG50D/T3 Rectifier Diode, Reverse Recovery Time-Max:2 µs,Diode Element Material:SILICON,Diode Type:RECTIFIER DIODE,Configuration:SINGLE,Sur...
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Part number or familyBYG50D/T3
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Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors BYG50D/T3 Rectifier Diode, Reverse Recovery Time-Max:2 µs,Diode Element Material:SILICON,Diode Type:RECTIFIER DIODE,Configuration:SINGLE,Surface Mount:YES,Rep Pk Reverse Voltage-Max:200 V,Number of Elements:1,Technology:AVALANCHE
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