NXP Semiconductor BYD33GT/R overview
BYD33GT/R is made by NXP Semiconductor. NXP Semiconductors BYD33GT/R Rectifier Diode, Output Current-Max:700 mA,Reverse Recovery Time-Max:250 ns,Diode Element Material:SILICON,Diode Type:RECTIFIER DIODE,Configuration:SINGLE,Surface Mount:NO,Rep Pk Reverse Voltage-Max:400 V,Number of Elements:1,Technology:AVALANCHE
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Part number or familyBYD33GT/R
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Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors BYD33GT/R Rectifier Diode, Output Current-Max:700 mA,Reverse Recovery Time-Max:250 ns,Diode Element Material:SILICON,Diode Type:RECTIFIER DIODE,Configuration:SINGLE,Surface Mount:NO,Rep Pk Reverse Voltage-Max:400 V,Number of Elements:1,Technology:AVALANCHE
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