NXP Semiconductor BAV99S overview
NXP Semiconductors BAV99S Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):715 mV, Reverse Recovery Time-Max:4 ns, Reverse Current-Max:50 µ...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BAV99S Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):715 mV, Reverse Recovery Time-Max:4 ns, Reverse Current-Max:50 µA, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:4
DescriptionNXP Semiconductors BAV99S Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):715 mV, Reverse Recovery Time-Max:4 ns, Reverse Current-Max:50 µA, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:4
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