NXP Semiconductor BAV756S overview
NXP BAV756S Specialized Hot IC, BAV756S NXP NXP Semiconductors BAV756S Rectifier Diode, Output Current-Max:250 mA, Forward Voltage-Max (VF):1.3 V, Reverse Recov...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP BAV756S Specialized Hot IC, BAV756S NXP
DescriptionNXP Semiconductors BAV756S Rectifier Diode, Output Current-Max:250 mA, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:4 ns, Reverse Current-Max:2.5 µA, Power Dissipation-Max:350 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:COMPLEX, Surface Mount:YES, Rep Pk Reverse Voltage-Max:90 V, Number of Elements:4
DescriptionNXP Semiconductors BAV756S Rectifier Diode, Output Current-Max:250 mA, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:4 ns, Reverse Current-Max:2.5 µA, Power Dissipation-Max:350 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:COMPLEX, Surface Mount:YES, Rep Pk Reverse Voltage-Max:90 V, Number of Elements:4
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