NXP Semiconductor BAV70S-T overview
NXP Semiconductors BAV70S-T Rectifier Diode, Output Current-Max:100 mA, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:350 mW, Diode Element Material:SIL...
Product details
Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BAV70S-T Rectifier Diode, Output Current-Max:100 mA, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:350 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:2 BANKS, COMMON CATHODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:4
DescriptionNXP Semiconductors BAV70S-T Rectifier Diode, Output Current-Max:100 mA, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:350 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:2 BANKS, COMMON CATHODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:4
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
NXP Semiconductor
View NXP Semiconductor profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request