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BAV19AMO

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NXP Semiconductor BAV19AMO

NXP Semiconductor BAV19AMO overview

NXP Semiconductors BAV19AMO Rectifier Diode, Output Current-Max:250 mA, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:400 mW, Diode Element Material:SI...

Manufactured byNXP Semiconductor
Part number or familyBAV19AMO
Product groupModules

Product details

Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BAV19AMO Rectifier Diode, Output Current-Max:250 mA, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:400 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:120 V, Number of Elements:1
DescriptionNXP Semiconductors BAV19AMO Rectifier Diode, Output Current-Max:250 mA, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:400 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:120 V, Number of Elements:1

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