NXP Semiconductor BAS83112 overview
NXP Semiconductors BAS83112 Rectifier Diode, Output Current-Max:30 mA, Forward Voltage-Max (VF):1 V, Reverse Current-Max:200 nA, Power Dissipation-Max:210 mW, D...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BAS83112 Rectifier Diode, Output Current-Max:30 mA, Forward Voltage-Max (VF):1 V, Reverse Current-Max:200 nA, Power Dissipation-Max:210 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1, Technology:SCHOTTKY
DescriptionNXP Semiconductors BAS83112 Rectifier Diode, Output Current-Max:30 mA, Forward Voltage-Max (VF):1 V, Reverse Current-Max:200 nA, Power Dissipation-Max:210 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1, Technology:SCHOTTKY
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