NXP Semiconductor BAS56212 overview
NXP Semiconductors BAS56212 Rectifier Diode, Reverse Recovery Time-Max:6 ns, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER ...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BAS56212 Rectifier Diode, Reverse Recovery Time-Max:6 ns, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:60 V, Number of Elements:2
DescriptionNXP Semiconductors BAS56212 Rectifier Diode, Reverse Recovery Time-Max:6 ns, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:60 V, Number of Elements:2
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