NXP Semiconductor BAS40-04212 overview
NXP Semiconductors BAS40-04212 Rectifier Diode, Output Current-Max:120 mA, Forward Voltage-Max (VF):1 V, Reverse Current-Max:10 µA, Power Dissipation-Max:250 m...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BAS40-04212 Rectifier Diode, Output Current-Max:120 mA, Forward Voltage-Max (VF):1 V, Reverse Current-Max:10 µA, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2, Technology:SCHOTTKY
DescriptionNXP Semiconductors BAS40-04212 Rectifier Diode, Output Current-Max:120 mA, Forward Voltage-Max (VF):1 V, Reverse Current-Max:10 µA, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2, Technology:SCHOTTKY
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