NXP Semiconductor BAS16VV, 315 overview
NXP Semiconductors BAS16VV, 315 Rectifier Diode, Output Current-Max:200 mA, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:180 mW, Diode Element Material...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BAS16VV, 315 Rectifier Diode, Output Current-Max:200 mA, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:180 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 3 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:3
DescriptionNXP Semiconductors BAS16VV, 315 Rectifier Diode, Output Current-Max:200 mA, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:180 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 3 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:3
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