NXP Semiconductor 9.33976E+11 overview
NXP Semiconductors 9.33976E+11 Rectifier Diode, Output Current-Max:200 mA, Reverse Recovery Time-Max:5 ns, Power Dissipation-Max:230 mW, Diode Element Material:...
Product details
Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors 9.33976E+11 Rectifier Diode, Output Current-Max:200 mA, Reverse Recovery Time-Max:5 ns, Power Dissipation-Max:230 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:30 V, Number of Elements:2, Technology:SCHOTTKY
DescriptionNXP Semiconductors 9.33976E+11 Rectifier Diode, Output Current-Max:200 mA, Reverse Recovery Time-Max:5 ns, Power Dissipation-Max:230 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:COMMON CATHODE, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2, Technology:SCHOTTKY
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
NXP Semiconductor
View NXP Semiconductor profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request