NXP Semiconductor 1N4446153 overview
1N4446153 is made by NXP Semiconductor. NXP Semiconductors 1N4446153 Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):1 V, Reverse Recovery Time-Max:4 ns, Reverse Current-Max:25 nA, Power Dissipation-Max:500 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE…
Manufactured byNXP Semiconductor
Part number or family1N4446153
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Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors 1N4446153 Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):1 V, Reverse Recovery Time-Max:4 ns, Reverse Current-Max:25 nA, Power Dissipation-Max:500 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:75 V, Number of Elements:1
DescriptionNXP Semiconductors 1N4446153 Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):1 V, Reverse Recovery Time-Max:4 ns, Reverse Current-Max:25 nA, Power Dissipation-Max:500 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:75 V, Number of Elements:1
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