NXP Semiconductor PHU2N50E overview
NXP Semiconductors PHU2N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...
Product details
Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PHU2N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:5 Ω
DescriptionNXP Semiconductors PHU2N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:5 Ω
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
NXP Semiconductor
View NXP Semiconductor profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request