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PHP12N10E

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NXP Semiconductor PHP12N10E

NXP Semiconductor PHP12N10E overview

NXP Semiconductors PHP12N10E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of ...

Manufactured byNXP Semiconductor
Part number or familyPHP12N10E
Product groupModules

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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PHP12N10E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):14 A,Drain Current-Max (ID):14 A,Drain-source On Resistance-Max:160 m?

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