NXP Semiconductor PHD6N10E overview
PHD6N10E is made by NXP Semiconductor. NXP Semiconductors PHD6N10E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):6.3 A,Drain-source On…
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Part number or familyPHD6N10E
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Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors PHD6N10E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):6.3 A,Drain-source On Resistance-Max:540 m?
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