NXP Semiconductor PHD2N60E overview
PHD2N60E is an IC device made by NXP Semiconductor. NXP Semiconductors PHD2N60E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):1.9 A,Drain…
Product details
Manufactured byNXP Semiconductor
Product typeIC Device
DescriptionNXP Semiconductors PHD2N60E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):1.9 A,Drain Current-Max (ID):1.9 A,Drain-source On Resistance-Max:6 ?
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NXP Semiconductor
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Product type
IC Device
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