NXP Semiconductor PHD2N50E overview
NXP Semiconductors PHD2N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PHD2N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:5 Ω
DescriptionNXP Semiconductors PHD2N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:5 Ω
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