NXP Semiconductor PHB36N06E overview
NXP Semiconductors PHB36N06E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of...
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Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors PHB36N06E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):41 A,Drain-source On Resistance-Max:38 m?
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